学术交流

Spintronics study in III-

发布时间:2011-12-14 浏览量:823

题目:Spintronics study in III-V semiconductors

报告人:Prof. Cui Xiaodong

The University of Hong Kong


摘要

In this talk, I report our experimental research on spintronics in nonmagnetic III-V semiconductors. We observe magneto-electric photocurrent generated via direct inter-band transitionsin an InGaAs/InAlAs two-dimensional electron gas by a linearly polarized incident light. The electric current is proportional to the in-plane magnetic field, which unbalances the velocities of the photoexcited carriers with opposite spins and consequently generates the electric current from a hidden spin photocurrent. The spin photocurrent can be evaluated from the measured electric current, and the conversion coefficient of spin photocurrent to electric current is self-consistently estimated to be 10-3~ 10-2 per Tesla. The observed light polarization dependence of the electric current is well explained by a theoretical model which reveals the wave vector angle dependence of the photoexcited carrier density.


时间:2011年6月7号下午15:00

地点:物理楼一楼报告厅